An analytical subthreshold I-V model of SiC MOSFETs.
Yi LiTao ZhouGeng JiangLiangbin DengZixuan GuoQiaoling SunBangyong YinYuqiu YangJunyao WuHuan CaiJun WangJungang YinQin LiuLinfeng DengPublished in: Microelectron. J. (2024)
Keyphrases
- theoretical framework
- probabilistic model
- statistical model
- formal model
- computational model
- high level
- closed form
- management system
- mathematical model
- prediction model
- real time
- neural network model
- hierarchical structure
- experimental data
- probability distribution
- artificial neural networks
- expert systems
- objective function
- e learning