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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology.

Augusto Ronchini XimenesPreethi PadmanabhanMyung-Jae LeeYuichiro YamashitaDun-Nian YaungEdoardo Charbon
Published in: IEEE J. Solid State Circuits (2019)
Keyphrases
  • cmos technology
  • low power
  • power consumption
  • spl times
  • parallel processing
  • low voltage
  • low cost
  • high speed
  • power dissipation
  • silicon on insulator
  • image sensor
  • real time
  • moving objects