A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4nm FinFET Technology.
Jeongkyun KimByungho YookTaemin ChoiKyuwon ChoiChanho LeeYunrong LiYoungo LeeSeok YunChanghoon DoHoyoung TangInhak LeeDongwook SeoSangyeop BaeckPublished in: VLSI Technology and Circuits (2023)