Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications.
Pranav M. TripathiHarshit SoniRishu ChaujarAjay KumarPublished in: IET Circuits Devices Syst. (2020)
Keyphrases
- numerical simulations
- low power
- cmos technology
- power consumption
- high speed
- low cost
- energy dissipation
- nm technology
- theoretical analysis
- high power
- single chip
- wireless transmission
- vlsi circuits
- vlsi architecture
- low power consumption
- digital signal processing
- temperature field
- lattice boltzmann
- logic circuits
- low voltage
- power reduction
- computational fluid dynamics
- finite element method
- numerical calculation
- multiscale
- mixed signal
- image sensor
- gate array