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A Word Line Pulse Circuit Technique for Reliable Magnetoelectric Random Access Memory.

Hochul LeeAlbert LeeShaodi WangFarbod EbrahimiPuneet GuptaPedram Khalili AmiriKang L. Wang
Published in: IEEE Trans. Very Large Scale Integr. Syst. (2017)
Keyphrases
  • random access memory
  • low voltage
  • design considerations
  • co occurrence
  • high speed
  • cmos technology
  • embedded dram
  • real time
  • shift register
  • main memory
  • flash memory