W-Band Divide-by-3 Injection-Locked Frequency Divider Using Stacked Cross-Coupled Transistors in 90 nm CMOS.
Yo-Sheng LinKai-Siang LanYu-Ching LinPublished in: RWS (2019)
Keyphrases
- cmos technology
- metal oxide semiconductor
- low power
- power consumption
- circuit design
- frequency response
- low cost
- silicon on insulator
- low voltage
- high speed
- nm technology
- parallel processing
- image sensor
- integrated circuit
- frequency spectrum
- high pass
- flip flops
- dielectric constant
- frequency band
- power dissipation
- diesel engine
- vlsi circuits
- video camera