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Device-process simulation of discrete silicon stabilitron with the stabilizing voltage of 6, 5 V.

N. L. DudarV. M. Borzdov
Published in: EWDTS (2011)
Keyphrases
  • low cost
  • data sets
  • process model
  • development process
  • real time
  • x ray
  • power consumption
  • field effect transistors