Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures.

Mahmoud Mehrabankhomartash Shiyuan Yin Alfonso J. Cruz Lukas Graber Maryam Saeedifard Simon Evans Florian Kapaun Ivan Revel Gerhard Steiner Ludovic Ybanez Chanyeop Park

Published in: IECON (2021)

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