A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs).
Omnia SamyHamdy AbdelhamidYehea IsmailAbdelhalim ZekryPublished in: Microelectron. Reliab. (2016)
Keyphrases
- high level
- probabilistic model
- theoretical analysis
- theoretical framework
- prior knowledge
- probability distribution
- simulation model
- statistical model
- computational model
- communication channels
- social networks
- hybrid model
- positive and negative
- mathematical model
- parameter estimation
- em algorithm
- management system
- similarity measure
- decision trees