16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells.
Yaxin DingJianguo YangYu LiuJianfeng GaoYuan WangPengfei JiangShuxian LvYuting ChenBoping WangWei WeiTiancheng GongKanhao XueQing LuoXiangshui MiaoMing LiuPublished in: VLSI Technology and Circuits (2023)