T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process.
Behnam Samadpoor RikanDavid KimKyung-Duk ChoiArash HejaziJoon-Mo YooYoungGun PuSeokkee KimHyungki HuhYeonjae JungKang-Yoon LeePublished in: Sensors (2022)