• search
    search
  • reviewers
    reviewers
  • feeds
    feeds
  • assignments
    assignments
  • settings
  • logout

Polarity Dependency and 1/E Model of Gate Oxide TDDB Degradation in 3D NAND.

Lina QuShengwei YangMing HeRui FangXiaojuan ZhuKun HanYi He
Published in: IRPS (2023)
Keyphrases
  • probabilistic model
  • formal model
  • cost function
  • em algorithm
  • theoretical analysis
  • mathematical model
  • similarity measure
  • probability distribution
  • computational model
  • statistical model