A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.
Yan LiSeungpil LeeYupin FongFeng PanTien-Chien KuoJong ParkTapan SamaddarHao NguyenMan MuiKhin HtooTeruhiko KameiMasaaki HigashitaniEmilio YeroGyuwan KwonPhil KlizaJun WanTetsuya KanekoHiroshi MaejimaHitoshi ShigaMakoto HamadaNorihiro FujitaKazunori KanebakoEugene TamAnne KohIris LuCalvin Chia-Hong KuoTrung PhamJonathan HuynhQui NguyenHardwell ChibvongodzeMitsuyuki WatanabeKen OowadaGrishma ShahByungki WooRay GaoJim ChanJames LanPatrick HongLiping PengDebi DasDhritiman GhoshVivek KalluruSanjay KulkarniRaul CerneaSharon HuynhDimitris PantelakisChi-Ming WangKhandker QuaderPublished in: ISSCC (2008)
Keyphrases
- flash memory
- hard disk
- disk drives
- read write
- solid state
- file system
- garbage collection
- main memory
- random access
- buffer management
- embedded systems
- database systems
- data storage
- storage medium
- storage management
- storage devices
- b tree
- memory management
- small size
- buffer pool
- high speed
- hand held devices
- storage systems
- data structure
- data mining