A 10T SRAM with Two Read and Write Modes across Row and Column for CAM Operation and Computing In-Memory.
Zhang ZhangZhihao ChenSikai ChenGuangjun XieJianmin ZengGang LiuPublished in: ISCAS (2024)
Keyphrases
- write operations
- read write
- storage medium
- data access
- binary matrix
- random access memory
- flash memory
- solid state
- storage devices
- power consumption
- memory usage
- binary matrices
- physical layout
- memory size
- random access
- data matrix
- rows and columns
- disk drives
- computing power
- memory requirements
- singular value decomposition