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GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs.
Bingxin Zhang
Xia An
Xiangyang Hu
Ming Li
Xing Zhang
Ru Huang
Published in:
Sci. China Inf. Sci. (2018)
Keyphrases
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high energy
evolutionary computation
wide range
expert systems
computer simulation
database
image sequences
evolutionary algorithm
control system
learning phase