Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets.

H.-B. Jo I.-G. Lee J.-M. Baek S. T. Lee S.-M. Choi H.-J. Kim H.-S. Jeong W.-S. Park J.-H. Yoo H.-Y. Lee D. Y. Yun SW. Son D.-H. Ko Tae-Woo Kim H.-M. Kwon S.-K. Kim Jun-Gyu Kim J. Yun T. Kim J. H. Lee J.-H. Lee C.-S. Shin K.-S. Seo Dae-Hyun Kim

Published in: VLSI Technology and Circuits (2022)

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