Instantaneous frequency measurement for IR-UWB signal in CMOS 130 nm.
Anthony GoavecRémy VauchéJean GaubertFrédéric HameauMykhailo ZarudnievEric MercierPublished in: ICECS (2016)
Keyphrases
- instantaneous frequency
- frequency modulation
- amplitude modulation
- non stationary
- cmos technology
- empirical mode decomposition
- nm technology
- multi component
- silicon on insulator
- high speed
- low cost
- metal oxide semiconductor
- multi band
- power consumption
- ultra wideband
- high frequency
- low power
- signal processing
- multiscale
- communication systems
- low voltage
- intrinsic mode functions
- wavelet transform
- feature extraction