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RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design.

Hritom DasManu RathoreRocco FebboMaximilian LiehrNathaniel C. CadyGarrett S. Rose
Published in: ACM Great Lakes Symposium on VLSI (2023)
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