A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.
Qiqiao WuYue CaoQing LuoHaijun JiangZhongze HanYongkang HanChunmeng DouHangbing LvQi LiuJianguo YangMing LiuPublished in: IEEE J. Solid State Circuits (2024)