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Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures.
R. Kudrawiec
M. Motyka
J. Misiewicz
B. Paszkiewicz
R. Paszkiewicz
M. Tlaczala
Published in:
Microelectron. J. (2009)
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