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Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.

Dimitri A. AntoniadisIngvar ÅbergCáit Ní ChléirighOsama M. NayfehAli Khaki-FiroozJudy L. Hoyt
Published in: IBM J. Res. Dev. (2006)
Keyphrases
  • field effect transistors
  • multi channel
  • discrete space
  • computer simulation
  • continuous domains
  • finite element analysis
  • quasi static