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Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs.

SangHyeon KimMasafumi YokoyamaYuki IkkuRyosho NakaneOsamu IchikawaTakenori OsadaMasahiko HataMitsuru TakenakaShinichi Takagi
Published in: ESSDERC (2013)
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