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Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs.
SangHyeon Kim
Masafumi Yokoyama
Yuki Ikku
Ryosho Nakane
Osamu Ichikawa
Takenori Osada
Masahiko Hata
Mitsuru Takenaka
Shinichi Takagi
Published in:
ESSDERC (2013)
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