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Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND.

Song-Hyeon KukJae-Hoon HanBong Ho KimJunpyo KimSang-Hyeon Kim
Published in: IMW (2023)
Keyphrases
  • low power consumption
  • low cost
  • flash memory
  • wide range
  • neural network
  • high precision
  • soft tissue
  • small size
  • storage devices
  • data sets
  • genetic algorithm
  • objective function
  • low power
  • multi channel