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Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND.
Song-Hyeon Kuk
Jae-Hoon Han
Bong Ho Kim
Junpyo Kim
Sang-Hyeon Kim
Published in:
IMW (2023)
Keyphrases
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low power consumption
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flash memory
wide range
neural network
high precision
soft tissue
small size
storage devices
data sets
genetic algorithm
objective function
low power
multi channel