Login / Signup

CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory.

Ta-Ching YuChin-Hsien WuYan-Qi Liao
Published in: IEEE Trans. Dependable Secur. Comput. (2023)
Keyphrases
  • flash memory
  • file system
  • solid state
  • disk drives
  • main memory
  • higher order
  • real time
  • high quality
  • multiresolution
  • embedded systems
  • huffman coding
  • run length coding