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Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.

Jian LiuKe WangXiaolong ZhouXiaopeng XiaoYongming TangZhongyuan MaKunji Chen
Published in: ASICON (2021)
Keyphrases
  • carbon nanotubes
  • high speed
  • thin film
  • structural properties
  • quantum mechanics
  • neural network
  • objective function