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Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters.

Tahui WangSheng-Jyh WuChimoon Huang
Published in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (1993)
Keyphrases
  • field effect transistors
  • high speed
  • simulation model
  • data sets
  • anomaly detection
  • simulation study
  • objective function
  • mathematical model
  • mathematical analysis
  • simulation models
  • circuit design
  • analog vlsi