Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method.
Mayank ChaturvediSima DimitrijevHamid Amini MoghadamDaniel HaasmannPeyush PandeUtkarsh JadliPublished in: IEEE Access (2021)
Keyphrases
- synthetic data
- experimental evaluation
- main contribution
- high accuracy
- image processing
- computational complexity
- computationally efficient
- detection method
- experimental study
- segmentation method
- feature selection
- clustering method
- support vector machine
- fully automatic
- mathematical model
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- neural network
- user friendly
- support vector machine svm
- model selection
- mutual information
- feature set
- semi supervised
- classification accuracy
- dynamic programming
- multiresolution
- preprocessing
- similarity measure