Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal-oxide semiconductor technology.
Jin-Sung YounMyung-Jae LeeKang-Yeob ParkWang-Soo KimWoo-Young ChoiPublished in: IET Circuits Devices Syst. (2015)
Keyphrases
- metal oxide semiconductor
- low power
- low cost
- image sensor
- integrated circuit
- high speed
- power consumption
- cmos technology
- single chip
- real time
- hardware and software
- low power consumption
- logic circuits
- video camera
- ultra low power
- wireless transmission
- image processing algorithms
- digital camera
- power reduction
- embedded systems
- power dissipation
- digital signal processing
- imaging systems
- vlsi architecture
- gate array
- computer vision