A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate.
Yan LiSeungpil LeeYupin FongFeng PanTien-Chien KuoJongmin ParkTapan SamaddarHao NguyenMan MuiKhin HtooTeruhiko KameiMasaaki HigashitaniEmilio YeroGyuwan KwonPhil KlizaJun WanTetsuya KanekoHiroshi MaejimaHitoshi ShigaMakoto HamadaNorihiro FujitaKazunori KanebakoEugene TamAnne KohIris LuCalvin Chia-Hong KuoTrung PhamJonathan HuynhQui NguyenHardwell ChibvongodzeMitsuyuki WatanabeKen OowadaGrishma ShahByungki WooRay GaoJim ChanJames LanPatrick HongLiping PengDebi DasDhritiman GhoshVivek KalluruSanjay KulkarniRaul-Adrian CerneaSharon HuynhDimitris PantelakisChi-Ming WangKhandker QuaderPublished in: IEEE J. Solid State Circuits (2009)
Keyphrases
- flash memory
- hard disk
- nm technology
- disk drives
- read write
- garbage collection
- solid state
- power consumption
- main memory
- random access
- file system
- embedded systems
- buffer management
- low power
- data storage
- database systems
- b tree
- buffer pool
- high speed
- storage systems
- storage devices
- small size
- storage medium
- storage management
- memory management
- low cost
- power dissipation
- databases
- data structure
- real time