A Compact-Area Low-VDDmin 6T SRAM With Improvement in Cell Stability, Read Speed, and Write Margin Using a Dual-Split-Control-Assist Scheme.
Meng-Fan ChangChien-Fu ChenTing-Hao ChangChi-Chang ShuaiYen-Yao WangYi-Ju ChenHiroyuki YamauchiPublished in: IEEE J. Solid State Circuits (2017)