16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology.
Kazushige KandaMasaru KoyanagiToshio YamamuraKoji HosonoMasahiro YoshiharaToru MiwaYosuke KatoAlex MakSiu Lung ChanFrank TsaiRaul CerneaBinh LeEiichi MakinoTakashi TairaHiroyuki OtakeNorifumi KajimuraSusumu FujimuraYoshiaki TakeuchiMikihiko ItohMasanobu ShirakawaDai NakamuraYuya SuzukiYuki OkukawaMasatsugu KojimaKazuhide YoneyaTakamichi ArizonoToshiki HisadaShinji MiyamotoMitsuhiro NoguchiToshitake YaegashiMasaaki HigashitaniFumitoshi ItoTeruhiko KameiGertjan HeminkTooru MaruyamaKazumi InoShigeo OhshimaPublished in: ISSCC (2008)
Keyphrases
- cmos technology
- flash memory
- low power
- high speed
- main memory
- solid state
- file system
- power consumption
- embedded systems
- low voltage
- random access
- parallel processing
- database systems
- data storage
- low cost
- b tree
- power dissipation
- storage devices
- energy efficiency
- index structure
- memory management
- database
- silicon on insulator
- database management systems
- multi dimensional
- case study