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A coupled-RTWO-based subharmonic receiver front-end for 5G E-Band backhaul links in 28nm bulk CMOS.

Marco VigilantePatrick Reynaert
Published in: ISSCC (2018)
Keyphrases
  • cmos technology
  • silicon on insulator
  • back end
  • high speed
  • nm technology
  • power consumption
  • spectral resolution
  • metal oxide semiconductor
  • low cost
  • circuit design
  • low power
  • neural network
  • frequency band
  • low pass