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A new multitime programmable non-volatile memory cell using high voltage NMOS.
Shunqiang Xu
Hongyi Wang
Jianfei Wu
Liming Zheng
Jietao Diao
Published in:
Microelectron. Reliab. (2018)
Keyphrases
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high voltage
main memory
operating conditions
digital signal processors
normal operation
low cost
flash memory
partial discharge
real time
data sets
neural network
data structure
general purpose
multi class
database management systems
data storage