94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone.
Wei-Chung ChenTzu-Chi HuangChao-Chang ChiuChih-Wei ChangKuo-Chun HsuPublished in: ISSCC (2018)
Keyphrases
- smart phones
- flash memory
- steady state
- mobile phone
- storage devices
- mobile devices
- mobile applications
- file system
- power consumption
- nonlinear systems
- main memory
- embedded systems
- solid state
- dead zone
- database
- random access
- fuzzy controller
- low cost
- artificial intelligence
- small size
- database systems
- inverted pendulum
- adaptive neural
- weight update
- real time