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A near-threshold 10T differential SRAM cell with high read and write margins for tri-gated FinFET technology.
Mitesh Limachia
Rajesh Amratlal Thakker
Nikhil Kothari
Published in:
Integr. (2018)
Keyphrases
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rapid development
read write
wide range
cost effective
case study
data processing
data sets
e learning
computer systems
key technologies