9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device.
Mengxiao LianYian YinJialin LiBingzhi ZouKeming ZhangXichen ZhangYafang XieYou WuZhixiang ZhangPublished in: Microelectron. J. (2023)